NSS40300DDR2G vs NSS40300MDR2G

Product Attributes

Part Number NSS40300DDR2G NSS40300MDR2G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
NSS40300DDR2G NSS40300MDR2G
Product Status Active Active
Transistor Type 2 PNP (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 3A 3A
Voltage - Collector Emitter Breakdown (Max) 40V 40V
Vce Saturation (Max) @ Ib, Ic 170mV @ 200mA, 2A 170mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 1A, 2V 180 @ 1A, 2V
Power - Max 653mW 653mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC