NSS30100LT1G vs NSV30100LT1G

Product Attributes

Part Number NSS30100LT1G NSV30100LT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NSS30100LT1G NSV30100LT1G
Product Status Active Active
Transistor Type PNP -
Current - Collector (Ic) (Max) 1 A -
Voltage - Collector Emitter Breakdown (Max) 30 V -
Vce Saturation (Max) @ Ib, Ic 650mV @ 200mA, 2A -
Current - Collector Cutoff (Max) 100nA -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 2V -
Power - Max 310 mW -
Frequency - Transition 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) -