NSS30100LT1G vs NSS30101LT1G

Product Attributes

Part Number NSS30100LT1G NSS30101LT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NSS30100LT1G NSS30101LT1G
Product Status Active Active
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 200mA, 2A 200mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 2V 300 @ 500mA, 5V
Power - Max 310 mW 310 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)