NSS30201MR6T1G vs NSS20201MR6T1G

Product Attributes

Part Number NSS30201MR6T1G NSS20201MR6T1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NSS30201MR6T1G NSS20201MR6T1G
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 30 V 20 V
Vce Saturation (Max) @ Ib, Ic 75mV @ 1mA, 100mA 150mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA, 5V 200 @ 1A, 5V
Power - Max 535 mW 460 mW
Frequency - Transition 300MHz 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP 6-TSOP