| Part Number | NSS20101JT1G | NSV20101JT1G |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Active |
| Transistor Type | NPN | NPN |
| Current - Collector (Ic) (Max) | 1 A | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V | 20 V |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 100mA, 1A | 220mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V | 200 @ 100mA, 2V |
| Power - Max | 300 mW | 255 mW |
| Frequency - Transition | 350MHz | 350MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | SC-89, SOT-490 | SC-89, SOT-490 |
| Supplier Device Package | SC-89-3 | SC-89-3 |