NSS1C301ET4G vs NSV1C301ET4G

Product Attributes

Part Number NSS1C301ET4G NSV1C301ET4G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NSS1C301ET4G NSV1C301ET4G
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300mA, 3A 250mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A, 2V 200 @ 500mA, 2V
Power - Max 2.1 W 2.1 W
Frequency - Transition 120MHz 120MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK