NSS12601CF8T1G vs NSS12600CF8T1G

Product Attributes

Part Number NSS12601CF8T1G NSS12600CF8T1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NSS12601CF8T1G NSS12600CF8T1G
Product Status Active Obsolete
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 6 A 5 A
Voltage - Collector Emitter Breakdown (Max) 12 V 12 V
Vce Saturation (Max) @ Ib, Ic 120mV @ 400mA, 4A 170mV @ 400mA, 4A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V 250 @ 1A, 2V
Power - Max 830 mW 830 mW
Frequency - Transition 140MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead
Supplier Device Package ChipFET™ ChipFET™