NSS12501UW3T2G vs NSS12500UW3T2G

Product Attributes

Part Number NSS12501UW3T2G NSS12500UW3T2G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NSS12501UW3T2G NSS12500UW3T2G
Product Status Active Active
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 5 A 5 A
Voltage - Collector Emitter Breakdown (Max) 12 V 12 V
Vce Saturation (Max) @ Ib, Ic 120mV @ 400mA, 4A 260mV @ 400mA, 4A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2A, 2V 200 @ 2A, 2V
Power - Max 875 mW 875 mW
Frequency - Transition 150MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 3-WDFN Exposed Pad 3-WDFN Exposed Pad
Supplier Device Package 3-WDFN (2x2) 3-WDFN (2x2)