NSS12200LT1G vs NSS1C200LT1G

Product Attributes

Part Number NSS12200LT1G NSS1C200LT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NSS12200LT1G NSS1C200LT1G
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 12 V 100 V
Vce Saturation (Max) @ Ib, Ic 180mV @ 200mA, 2A 250mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 500mA, 2V 120 @ 50mA, 2V
Power - Max 460 mW 490 mW
Frequency - Transition 100MHz 120MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)