NSS12200WT1G vs NSS12200LT1G

Product Attributes

Part Number NSS12200WT1G NSS12200LT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NSS12200WT1G NSS12200LT1G
Product Status Last Time Buy Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 12 V 12 V
Vce Saturation (Max) @ Ib, Ic 290mV @ 20mA, 1A 180mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 800mA, 1.5 V 250 @ 500mA, 2V
Power - Max 450 mW 460 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-88/SC70-6/SOT-363 SOT-23-3 (TO-236)