NSV12100XV6T1G vs NSS12100XV6T1G

Product Attributes

Part Number NSV12100XV6T1G NSS12100XV6T1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NSV12100XV6T1G NSS12100XV6T1G
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 12 V 12 V
Vce Saturation (Max) @ Ib, Ic 440mV @ 100mA, 1A 440mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 2V 100 @ 500mA, 2V
Power - Max 650 mW 500 mW
Frequency - Transition - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563