NSM80101MT1G vs NSM80100MT1G

Product Attributes

Part Number NSM80101MT1G NSM80100MT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NSM80101MT1G NSM80100MT1G
Product Status Active Active
Transistor Type NPN + Diode (Isolated) PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA, 1V 120 @ 10mA, 1V
Power - Max 400 mW 270 mW
Frequency - Transition 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-74, SOT-457 SC-74, SOT-457
Supplier Device Package SC-74 SC-74