NSBC123TDP6T5G vs NSBC123JDP6T5G

Product Attributes

Part Number NSBC123TDP6T5G NSBC123JDP6T5G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased Transistors - Bipolar (BJT) - Arrays, Pre-Biased
NSBC123TDP6T5G NSBC123JDP6T5G
Product Status Active Active
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V
Resistor - Base (R1) 2.2kOhms 2.2kOhms
Resistor - Emitter Base (R2) - 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA
Frequency - Transition - -
Power - Max 339mW 339mW
Mounting Type Surface Mount Surface Mount
Package / Case SOT-963 SOT-963
Supplier Device Package SOT-963 SOT-963