| Part Number | NSBC115EPDXV6T1G | NSBC113EPDXV6T1G |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
|
|
|
| Product Status | Active | Active |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | - |
| Current - Collector (Ic) (Max) | 100mA | - |
| Voltage - Collector Emitter Breakdown (Max) | 50V | - |
| Resistor - Base (R1) | 100kOhms | - |
| Resistor - Emitter Base (R2) | 100kOhms | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V | - |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA | - |
| Current - Collector Cutoff (Max) | 500nA | - |
| Frequency - Transition | - | - |
| Power - Max | 357mW | - |
| Mounting Type | Surface Mount | - |
| Package / Case | SOT-563, SOT-666 | - |
| Supplier Device Package | SOT-563 | - |