NSBC114YDXV6T1G vs NSBC114TDXV6T1G

Product Attributes

Part Number NSBC114YDXV6T1G NSBC114TDXV6T1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased Transistors - Bipolar (BJT) - Arrays, Pre-Biased
NSBC114YDXV6T1G NSBC114TDXV6T1G
Product Status Active Active
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V
Resistor - Base (R1) 10kOhms 10kOhms
Resistor - Emitter Base (R2) 47kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA
Frequency - Transition - -
Power - Max 500mW 500mW
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563