NSBC113EPDXV6T1G vs NSBC113EDXV6T1G

Product Attributes

Part Number NSBC113EPDXV6T1G NSBC113EDXV6T1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased Transistors - Bipolar (BJT) - Arrays, Pre-Biased
NSBC113EPDXV6T1G NSBC113EDXV6T1G
Product Status Active Active
Transistor Type - 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) - 100mA
Voltage - Collector Emitter Breakdown (Max) - 50V
Resistor - Base (R1) - 1kOhms
Resistor - Emitter Base (R2) - 1kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce - 3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic - 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) - 500nA
Frequency - Transition - -
Power - Max - 500mW
Mounting Type - Surface Mount
Package / Case - SOT-563, SOT-666
Supplier Device Package - SOT-563