Part Number | NSBC113EPDXV6T1G | NSBC113EDXV6T1G |
---|---|---|
Manufacturer | onsemi | onsemi |
Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
![]() |
![]() |
|
Product Status | Active | Active |
Transistor Type | - | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | - | 100mA |
Voltage - Collector Emitter Breakdown (Max) | - | 50V |
Resistor - Base (R1) | - | 1kOhms |
Resistor - Emitter Base (R2) | - | 1kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | - | 3 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | - | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max) | - | 500nA |
Frequency - Transition | - | - |
Power - Max | - | 500mW |
Mounting Type | - | Surface Mount |
Package / Case | - | SOT-563, SOT-666 |
Supplier Device Package | - | SOT-563 |