NSBC113EDXV6T1G vs NSBC113EDXV6T1

Product Attributes

Part Number NSBC113EDXV6T1G NSBC113EDXV6T1
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased Transistors - Bipolar (BJT) - Arrays, Pre-Biased
NSBC113EDXV6T1G NSBC113EDXV6T1
Product Status Active Obsolete
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V
Resistor - Base (R1) 1kOhms 1kOhms
Resistor - Emitter Base (R2) 1kOhms 1kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA, 10V 3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA
Frequency - Transition - -
Power - Max 500mW 500mW
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563