NSBC144EDXV6T1G vs NSBA144EDXV6T1G

Product Attributes

Part Number NSBC144EDXV6T1G NSBA144EDXV6T1G
Manufacturer onsemi Fairchild Semiconductor
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased Transistors - Bipolar (BJT) - Arrays, Pre-Biased
NSBC144EDXV6T1G NSBA144EDXV6T1G
Product Status Active Active
Transistor Type 2 NPN - Pre-Biased (Dual) -
Current - Collector (Ic) (Max) 100mA -
Voltage - Collector Emitter Breakdown (Max) 50V -
Resistor - Base (R1) 47kOhms -
Resistor - Emitter Base (R2) 47kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA -
Current - Collector Cutoff (Max) 500nA -
Frequency - Transition - -
Power - Max 500mW -
Mounting Type Surface Mount -
Package / Case SOT-563, SOT-666 -
Supplier Device Package SOT-563 -