Part Number | NP83P04PDG-E1-AY | NP83P06PDG-E1-AY |
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Manufacturer | Renesas Electronics America Inc | Renesas Electronics America Inc |
Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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Product Status | Active | Active |
FET Type | P-Channel | P-Channel |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40 V | 60 V |
Current - Continuous Drain (Id) @ 25°C | 83A (Tc) | 83A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 5.3mOhm @ 41.5A, 10V | 8.8mOhm @ 41.5A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V | 190 nC @ 10 V |
Vgs (Max) | - | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 9820 pF @ 10 V | 10100 pF @ 10 V |
FET Feature | - | - |
Power Dissipation (Max) | - | 1.8W (Ta), 150W (Tc) |
Operating Temperature | - | 175°C (TJ) |
Mounting Type | Surface Mount | Surface Mount |
Supplier Device Package | TO-263 | TO-263 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |