| Part Number | NP82N04MDG-S18-AY | NP82N04NDG-S18-AY |
|---|---|---|
| Manufacturer | Renesas Electronics America Inc | Renesas Electronics America Inc |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) | 82A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | - |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 41A, 10V | 4.2mOhm @ 41A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V | 150 nC @ 10 V |
| Vgs (Max) | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V | 9 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 1.8W (Ta), 143W (Tc) | 1.8W (Ta), 143W (Tc) |
| Operating Temperature | 175°C | 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-220-3 | TO-262-3 |
| Package / Case | TO-220-3 | TO-262-3 Full Pack, I²Pak |