NP36P04KDG-E1-AY vs NP36P06KDG-E1-AY

Product Attributes

Part Number NP36P04KDG-E1-AY NP36P06KDG-E1-AY
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NP36P04KDG-E1-AY NP36P06KDG-E1-AY
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 17mOhm @ 18A, 10V 29.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V 54 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 10 V 3100 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta), 56W (Tc) 1.8W (Ta), 56W (Tc)
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263 TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB