NP23N06YDG-E1-AY vs NP33N06YDG-E1-AY

Product Attributes

Part Number NP23N06YDG-E1-AY NP33N06YDG-E1-AY
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NP23N06YDG-E1-AY NP33N06YDG-E1-AY
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc) 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 11.5A, 10V 14mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V 78 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V 3900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1W (Ta), 60W (Tc) 1W (Ta), 97W (Tc)
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-HSON 8-HSON
Package / Case 8-SMD, Flat Lead Exposed Pad 8-SMD, Flat Lead Exposed Pad