NP110N03PUG-E1-AY vs NP110N04PUG-E1-AY

Product Attributes

Part Number NP110N03PUG-E1-AY NP110N04PUG-E1-AY
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NP110N03PUG-E1-AY NP110N04PUG-E1-AY
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 40 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.5mOhm @ 55A, 10V 1.8mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 380 nC @ 10 V 390 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 24600 pF @ 25 V 25700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta), 288W (Tc) 1.8W (Ta), 288W (Tc)
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263 TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB