NJW3281G vs NJW0281G

Product Attributes

Part Number NJW3281G NJW0281G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NJW3281G NJW0281G
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 15 A 15 A
Voltage - Collector Emitter Breakdown (Max) 250 V 250 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 800mA, 8A 1V @ 500mA, 5A
Current - Collector Cutoff (Max) 50µA (ICBO) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 3A, 5V 75 @ 3A, 5V
Power - Max 200 W 150 W
Frequency - Transition 30MHz 30MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
Supplier Device Package TO-3P-3L TO-3P-3L