NJVMJD31CT4G-VF01 vs NJVMJD41CT4G-VF01

Product Attributes

Part Number NJVMJD31CT4G-VF01 NJVMJD41CT4G-VF01
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NJVMJD31CT4G-VF01 NJVMJD41CT4G-VF01
Product Status Obsolete Active
Transistor Type NPN -
Current - Collector (Ic) (Max) 3 A -
Voltage - Collector Emitter Breakdown (Max) 100 V -
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A -
Current - Collector Cutoff (Max) 50µA -
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A, 4V -
Power - Max 1.56 W -
Frequency - Transition 3MHz -
Operating Temperature -65°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 -
Supplier Device Package DPAK -