NJVMJD32CT4G vs NJVMJD42CT4G

Product Attributes

Part Number NJVMJD32CT4G NJVMJD42CT4G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NJVMJD32CT4G NJVMJD42CT4G
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 3 A 6 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max) 50µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A, 4V 30 @ 300mA, 4V
Power - Max 1.56 W 1.75 W
Frequency - Transition 3MHz 3MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK