NJVMJD128T4G vs NJVMJD148T4G

Product Attributes

Part Number NJVMJD128T4G NJVMJD148T4G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NJVMJD128T4G NJVMJD148T4G
Product Status Active Active
Transistor Type PNP - Darlington NPN
Current - Collector (Ic) (Max) 8 A 4 A
Voltage - Collector Emitter Breakdown (Max) 120 V 45 V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 5mA 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V 85 @ 500mA, 1V
Power - Max 1.75 W 1.75 W
Frequency - Transition - 3MHz
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK