NJVMJD128T4G vs NJVMJD127T4G

Product Attributes

Part Number NJVMJD128T4G NJVMJD127T4G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NJVMJD128T4G NJVMJD127T4G
Product Status Active Active
Transistor Type PNP - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 120 V 100 V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A 4V @ 80mA, 8A
Current - Collector Cutoff (Max) 5mA 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V 1000 @ 4A, 4V
Power - Max 1.75 W 20 W
Frequency - Transition - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK