NJVMJB45H11T4G vs NJVMJD45H11T4G

Product Attributes

Part Number NJVMJB45H11T4G NJVMJD45H11T4G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NJVMJB45H11T4G NJVMJD45H11T4G
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 10 A 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 10µA 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V 60 @ 2A, 1V
Power - Max 2 W 1.75 W
Frequency - Transition 40MHz 90MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D²PAK DPAK