NJVMJB42CT4G vs NJVMJD42CT4G

Product Attributes

Part Number NJVMJB42CT4G NJVMJD42CT4G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NJVMJB42CT4G NJVMJD42CT4G
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 6 A 6 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max) 700µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A, 4V 30 @ 300mA, 4V
Power - Max 2 W 1.75 W
Frequency - Transition 3MHz 3MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D²PAK DPAK