NJL3281DG vs NJL4281DG

Product Attributes

Part Number NJL3281DG NJL4281DG
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NJL3281DG NJL4281DG
Product Status Active Obsolete
Transistor Type NPN NPN + Diode (Isolated)
Current - Collector (Ic) (Max) 15 A 15 A
Voltage - Collector Emitter Breakdown (Max) 260 V 350 V
Vce Saturation (Max) @ Ib, Ic 3V @ 1A, 10A 1V @ 800mA, 8A
Current - Collector Cutoff (Max) 50µA (ICBO) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 5A, 5V 80 @ 5A, 5V
Power - Max 200 W 230 W
Frequency - Transition 30MHz 35MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-264-5 TO-264-5
Supplier Device Package TO-264 TO-264