NHDTC123JTVL vs NHDTA123JTVL

Product Attributes

Part Number NHDTC123JTVL NHDTA123JTVL
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
NHDTC123JTVL NHDTA123JTVL
Product Status Active Active
Transistor Type NPN - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Resistor - Base (R1) 2.2 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 500µA, 10mA 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA 100nA
Frequency - Transition 170 MHz 150 MHz
Power - Max 250 mW 250 mW
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB