NGTB75N65FL2WG vs NGTB35N65FL2WG

Product Attributes

Part Number NGTB75N65FL2WG NGTB35N65FL2WG
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
NGTB75N65FL2WG NGTB35N65FL2WG
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 100 A 70 A
Current - Collector Pulsed (Icm) 200 A 120 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 75A 2V @ 15V, 35A
Power - Max 595 W 300 W
Switching Energy 1.5mJ (on), 1mJ (off) 840µJ (on), 280µJ (off)
Input Type Standard Standard
Gate Charge 310 nC 125 nC
Td (on/off) @ 25°C 110ns/270ns 72ns/132ns
Test Condition 400V, 75A, 10Ohm, 15V 400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr) 80 ns 68 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3