| Part Number | NGTB50N60S1WG | NGTB50N65S1WG |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Category | Transistors - IGBTs - Single | Transistors - IGBTs - Single |
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| Product Status | Obsolete | Obsolete |
| IGBT Type | Trench | Trench |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | 650 V |
| Current - Collector (Ic) (Max) | 100 A | 140 A |
| Current - Collector Pulsed (Icm) | 200 A | 140 A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A | 2.45V @ 15V, 50A |
| Power - Max | 417 W | 300 W |
| Switching Energy | 1.5mJ (on), 460µJ (off) | 1.25mJ (on), 530µJ (off) |
| Input Type | Standard | Standard |
| Gate Charge | 220 nC | 128 nC |
| Td (on/off) @ 25°C | 100ns/237ns | 75ns/128ns |
| Test Condition | 400V, 50A, 10Ohm, 15V | 400V, 50A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 94 ns | 70 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 |
| Supplier Device Package | TO-247-3 | TO-247-3 |