NGTB60N65FL2WG vs NGTB50N65FL2WG

Product Attributes

Part Number NGTB60N65FL2WG NGTB50N65FL2WG
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
NGTB60N65FL2WG NGTB50N65FL2WG
Product Status Obsolete Active
IGBT Type Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 100 A 100 A
Current - Collector Pulsed (Icm) 240 A 200 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 60A 2V @ 15V, 50A
Power - Max 595 W 417 W
Switching Energy 1.59mJ (on), 660µJ (off) 1.5mJ (on), 460µJ (off)
Input Type Standard Standard
Gate Charge 318 nC 220 nC
Td (on/off) @ 25°C 117ns/265ns 100ns/237ns
Test Condition 400V, 60A, 10Ohm, 15V 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr) 96 ns 94 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3