NGTB30N60SWG vs NGTB50N60SWG

Product Attributes

Part Number NGTB30N60SWG NGTB50N60SWG
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
NGTB30N60SWG NGTB50N60SWG
Product Status Obsolete Obsolete
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 60 A 100 A
Current - Collector Pulsed (Icm) 120 A 200 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 30A 2.6V @ 15V, 50A
Power - Max 189 W -
Switching Energy 750µJ (on), 540µJ (off) 600µJ (off)
Input Type Standard Standard
Gate Charge 90 nC 135 nC
Td (on/off) @ 25°C 57ns/109ns 70ns/144ns
Test Condition 400V, 30A, 10Ohm, 15V 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr) 200 ns 376 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3