NGTB50N60L2WG vs NGTB30N60L2WG

Product Attributes

Part Number NGTB50N60L2WG NGTB30N60L2WG
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
NGTB50N60L2WG NGTB30N60L2WG
Product Status Obsolete Obsolete
IGBT Type Trench Field Stop -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 100 A 100 A
Current - Collector Pulsed (Icm) 200 A 60 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 50A 1.6V @ 15V, 30A
Power - Max 500 W 225 W
Switching Energy 800µJ (on), 600µJ (off) 310µJ (on), 1.14mJ (off)
Input Type Standard Standard
Gate Charge 310 nC 166 nC
Td (on/off) @ 25°C 110ns/270ns 100ns/390ns
Test Condition 400V, 50A, 10Ohm, 15V 300V, 30A, 30Ohm, 15V
Reverse Recovery Time (trr) 67 ns 70 ns
Operating Temperature -55°C ~ 175°C (TJ) 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3