NGTG50N60FWG vs NGTB50N60FWG

Product Attributes

Part Number NGTG50N60FWG NGTB50N60FWG
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
NGTG50N60FWG NGTB50N60FWG
Product Status Obsolete Obsolete
IGBT Type Trench -
Voltage - Collector Emitter Breakdown (Max) 600 V -
Current - Collector (Ic) (Max) 100 A -
Current - Collector Pulsed (Icm) 200 A -
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 50A -
Power - Max 223 W -
Switching Energy 1.1mJ (on), 1.2mJ (off) -
Input Type Standard -
Gate Charge 310 nC -
Td (on/off) @ 25°C 117ns/285ns -
Test Condition 400V, 50A, 10Ohm, 15V -
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole -
Package / Case TO-247-3 -
Supplier Device Package TO-247-3 -