NGTB50N120FL2WG vs NGTB50N120FL2WAG

Product Attributes

Part Number NGTB50N120FL2WG NGTB50N120FL2WAG
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
NGTB50N120FL2WG NGTB50N120FL2WAG
Product Status Active Active
IGBT Type Trench Field Stop -
Voltage - Collector Emitter Breakdown (Max) 1200 V -
Current - Collector (Ic) (Max) 100 A -
Current - Collector Pulsed (Icm) 200 A -
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A -
Power - Max 535 W -
Switching Energy 4.4mJ (on), 1.4mJ (off) -
Input Type Standard -
Gate Charge 311 nC -
Td (on/off) @ 25°C 118ns/282ns -
Test Condition 600V, 50A, 10Ohm, 15V -
Reverse Recovery Time (trr) 256 ns -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole -
Package / Case TO-247-3 -
Supplier Device Package TO-247 -