NGTB50N120FL2WG vs NGTB30N120FL2WG

Product Attributes

Part Number NGTB50N120FL2WG NGTB30N120FL2WG
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
NGTB50N120FL2WG NGTB30N120FL2WG
Product Status Active Obsolete
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 100 A 60 A
Current - Collector Pulsed (Icm) 200 A 120 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A 2.3V @ 15V, 30A
Power - Max 535 W 452 W
Switching Energy 4.4mJ (on), 1.4mJ (off) 2.6mJ (on), 700µJ (off)
Input Type Standard Standard
Gate Charge 311 nC 220 nC
Td (on/off) @ 25°C 118ns/282ns 98ns/210ns
Test Condition 600V, 50A, 10Ohm, 15V 600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 256 ns 240 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247 TO-247