NGTB45N60S1WG vs NGTB45N60S2WG

Product Attributes

Part Number NGTB45N60S1WG NGTB45N60S2WG
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
NGTB45N60S1WG NGTB45N60S2WG
Product Status Obsolete Active
IGBT Type Trench -
Voltage - Collector Emitter Breakdown (Max) 600 V -
Current - Collector (Ic) (Max) 90 A -
Current - Collector Pulsed (Icm) 180 A -
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 45A -
Power - Max 300 W -
Switching Energy 1.25mJ (on), 530µJ (off) -
Input Type Standard -
Gate Charge 125 nC -
Td (on/off) @ 25°C 72ns/132ns -
Test Condition 400V, 45A, 10Ohm, 15V -
Reverse Recovery Time (trr) 70 ns -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole -
Package / Case TO-247-3 -
Supplier Device Package TO-247-3 -