NGTB40N60L2WG vs NGTB30N60L2WG

Product Attributes

Part Number NGTB40N60L2WG NGTB30N60L2WG
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
NGTB40N60L2WG NGTB30N60L2WG
Product Status Obsolete Obsolete
IGBT Type Trench Field Stop -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 80 A 100 A
Current - Collector Pulsed (Icm) 160 A 60 A
Vce(on) (Max) @ Vge, Ic 2.61V @ 15V, 40A 1.6V @ 15V, 30A
Power - Max 417 W 225 W
Switching Energy 1.17mJ (on), 280µJ (off) 310µJ (on), 1.14mJ (off)
Input Type Standard Standard
Gate Charge 228 nC 166 nC
Td (on/off) @ 25°C 98ns/213ns 100ns/390ns
Test Condition 400V, 40A, 10Ohm, 15V 300V, 30A, 30Ohm, 15V
Reverse Recovery Time (trr) 73 ns 70 ns
Operating Temperature -55°C ~ 175°C (TJ) 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3