NGTB35N60FL2WG vs NGTB75N60FL2WG

Product Attributes

Part Number NGTB35N60FL2WG NGTB75N60FL2WG
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
NGTB35N60FL2WG NGTB75N60FL2WG
Product Status Obsolete Obsolete
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 70 A 100 A
Current - Collector Pulsed (Icm) 120 A 200 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 35A 2V @ 15V, 75A
Power - Max 300 W 595 W
Switching Energy 840µJ (on), 280µJ (off) 1.5mJ (on), 1mJ (off)
Input Type Standard Standard
Gate Charge 125 nC 310 nC
Td (on/off) @ 25°C 72ns/132ns 110ns/270ns
Test Condition 400V, 35A, 10Ohm, 15V 400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr) 68 ns 80 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3