NGTB30N120LWG vs NGTB40N120LWG

Product Attributes

Part Number NGTB30N120LWG NGTB40N120LWG
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
NGTB30N120LWG NGTB40N120LWG
Product Status Obsolete Obsolete
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 60 A 80 A
Current - Collector Pulsed (Icm) 240 A 320 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 30A 2.35V @ 15V, 40A
Power - Max 560 W 260 W
Switching Energy 4.4mJ (on), 1mJ (off) 5.5mJ (on), 1.4mJ (off)
Input Type Standard Standard
Gate Charge 420 nC 420 nC
Td (on/off) @ 25°C 136ns/360ns 140ns/360ns
Test Condition 600V, 30A, 10Ohm, 15V 600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3