NGTB30N120LWG vs NGTB30N120L2WG

Product Attributes

Part Number NGTB30N120LWG NGTB30N120L2WG
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
NGTB30N120LWG NGTB30N120L2WG
Product Status Obsolete Active
IGBT Type Trench Field Stop -
Voltage - Collector Emitter Breakdown (Max) 1200 V -
Current - Collector (Ic) (Max) 60 A -
Current - Collector Pulsed (Icm) 240 A -
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 30A -
Power - Max 560 W -
Switching Energy 4.4mJ (on), 1mJ (off) -
Input Type Standard -
Gate Charge 420 nC -
Td (on/off) @ 25°C 136ns/360ns -
Test Condition 600V, 30A, 10Ohm, 15V -
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole -
Package / Case TO-247-3 -
Supplier Device Package TO-247-3 -