NGTB30N120FL2WG vs NGTB30N120L2WG

Product Attributes

Part Number NGTB30N120FL2WG NGTB30N120L2WG
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
NGTB30N120FL2WG NGTB30N120L2WG
Product Status Obsolete Active
IGBT Type Trench Field Stop -
Voltage - Collector Emitter Breakdown (Max) 1200 V -
Current - Collector (Ic) (Max) 60 A -
Current - Collector Pulsed (Icm) 120 A -
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A -
Power - Max 452 W -
Switching Energy 2.6mJ (on), 700µJ (off) -
Input Type Standard -
Gate Charge 220 nC -
Td (on/off) @ 25°C 98ns/210ns -
Test Condition 600V, 30A, 10Ohm, 15V -
Reverse Recovery Time (trr) 240 ns -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole -
Package / Case TO-247-3 -
Supplier Device Package TO-247 -