NGTB25N120LWG vs NGTB25N120SWG

Product Attributes

Part Number NGTB25N120LWG NGTB25N120SWG
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
NGTB25N120LWG NGTB25N120SWG
Product Status Obsolete Obsolete
IGBT Type Trench Field Stop Trench
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 50 A 50 A
Current - Collector Pulsed (Icm) 200 A 100 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 25A 2.4V @ 15V, 25A
Power - Max 192 W 385 W
Switching Energy 3.4mJ (on), 800µJ (off) 1.95mJ (on), 600µJ (off)
Input Type Standard Standard
Gate Charge 200 nC 178 nC
Td (on/off) @ 25°C 89ns/235ns 87ns/179ns
Test Condition 600V, 25A, 10Ohm, 15V 600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr) - 154 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3