NGTB15N60S1EG vs NGTG15N60S1EG

Product Attributes

Part Number NGTB15N60S1EG NGTG15N60S1EG
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
NGTB15N60S1EG NGTG15N60S1EG
Product Status Obsolete Obsolete
IGBT Type NPT NPT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 30 A 30 A
Current - Collector Pulsed (Icm) 120 A 120 A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 15A 1.7V @ 15V, 15A
Power - Max 117 W 117 W
Switching Energy 550µJ (on), 350µJ (off) 550µJ (on), 350µJ (off)
Input Type Standard Standard
Gate Charge 88 nC 88 nC
Td (on/off) @ 25°C 65ns/170ns 65ns/170ns
Test Condition 400V, 15A, 22Ohm, 15V 400V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr) 270 ns -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220AB TO-220AB