NGTB03N60R2DT4G vs NGTB05N60R2DT4G

Product Attributes

Part Number NGTB03N60R2DT4G NGTB05N60R2DT4G
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
NGTB03N60R2DT4G NGTB05N60R2DT4G
Product Status Obsolete Active
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V -
Current - Collector (Ic) (Max) 9 A -
Current - Collector Pulsed (Icm) 12 A -
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 3A -
Power - Max 49 W -
Switching Energy 50µJ (on), 27µJ (off) -
Input Type Standard -
Gate Charge 17 nC -
Td (on/off) @ 25°C 27ns/59ns -
Test Condition 300V, 3A, 30Ohm, 15V -
Reverse Recovery Time (trr) 65 ns -
Operating Temperature 175°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 -
Supplier Device Package DPAK -