| Part Number | MUN5312DW1T1G | MUN5316DW1T1G |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
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|
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| Product Status | Active | Active |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V | 50V |
| Resistor - Base (R1) | 22kOhms | 4.7kOhms |
| Resistor - Emitter Base (R2) | 22kOhms | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V | 160 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA | 500nA |
| Frequency - Transition | - | - |
| Power - Max | 250mW | 250mW |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 | SC-88/SC70-6/SOT-363 |